dt1042-04so document number: ds36292 rev. 2 - 2 1 of 5 www.diodes.com september 2013 ? diodes incorporated dt1042-04so advance information 4 channel low capacitance tvs diode array features ? low clamping voltage, i/o to v ss ? ? typical 9v at 10a 100ns, tlp ? typical 7.7v at 6a 8 s/20 s ? ? iec 61000-4-2 (esd): air ? + 27/-19kv, contact ? 16kv ? iec 61000-4-4 (eft): level-4 ? ? iec 61000-4-5 (lightning): 6a ? ? 4 channels of esd protection ? ? low channel input capacitance of 0.65pf typical ? ? tlp dynamic resistance: 0.25 ?? ? typically used for high speed ports such as usb 2.0, ? ieee1394, hdmi, laptop and personal computers, flat panel displays, video graphics displays, sim ports ? totally lead-free & fully rohs compliant (notes 1 & 2) ? ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: sot26 ? case material: molded plasti c, ?green? molding compound. ? ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over copper leadframe ? (lead free plating). solderable per mil-std-202, method 208 ? weight: 0.016 grams (approximate) ordering information (note 4) product compliance marking reel size (inches) tape width (mm) quantity per reel DT1042-04SO-7 standard bc1 7 8 3,000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defin ed as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2013 2014 2015 2016 2017 2018 code a b c d e f month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view device schematic bc1 = product type marking code ym = date code marking y = year (ex: a = 2013) m = month (ex: 9 = september) sot26 a17 ym bc1 i/o4 vcc vss i/o3 i/o2 i/o1 e3
dt1042-04so document number: ds36292 rev. 2 - 2 2 of 5 www.diodes.com september 2013 ? diodes incorporated dt1042-04so advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit conditions peak pulse current, per iec 61000-4-5 i pp_i/o 6 a i/o to v ss , 8/20 s peak pulse power, per iec 61000-4-5 p pp_i/o 55 w i/o to v ss , 8/20 s operating voltage (dc) v dc 5.5 v i/o to v ss esd protection ? contact discharge, per iec 61000-4-2 v esd_i/o 16 kv i/o to v ss esd protection ? air discharge, per iec 61000-4-2 v esd_i/o +27/-19 kv i/o to v ss operating temperature t op -55 to +85 c storage temperature t stg -55 to +150 c thermal characteristics characteristic symbol value unit power dissipation typical (note 5) p d 300 mw thermal resistance, junction to ambient typical (note 5) r ja 417 c/w electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test conditions reverse working voltage v rwm 5.0 v v cc to v ss reverse current (note 6) i r(vcc to vss) 1.0 a v r = v rwm = 5v, v cc to v ss reverse current (note 6) i r(io to vss) 0.5 a v r = v rwm = 5v, any i/o to v ss reverse breakdown voltage v br 6.2 v i r = 1ma, v cc to v ss forward clamping voltage v f -1.0 -0.8 v i f = -15ma, v cc to v ss reverse clamping voltage(note 7) v c_vcc 6.3 v i pp = 9a, v cc to v ss , 8/20 s v c_i/o 7.7 9 v i pp = 6a, i/o to v ss , 8/20 s esd clamping voltage v esd_vcc 6.8 v tlp, 10a, tp = 100 ns, v cc to v ss , per fig. 8 v esd _ i/o 9 v tlp, 10a, tp = 100 ns, i/o to v ss , per fig. 8 dynamic resistance r dif_vcc 0.1 ? tlp, 10a, tp = 100 ns, v cc to v ss r dif_i/o 0.25 ? tlp, 10a, tp = 100 ns, i/o to v ss channel input capacitance c i/o to v ss 0.65 0.8 pf v r = 2.5v, v cc = 5v, f = 1mhz variation of channel input capacitance ' c i/o 0.02 pf v cc = 5v, v ss = 0v, i/o = 2.5v, f =1mhz, t=+25c , i/o_x to v ss ? i/o_y to v ss notes: 5. device mounted on polymide pcb pad layout (2oz copper) as shown on diodes inc. suggested pad layout ap02001, wh ich can be found on our website at http://www.diodes.com. 6. short duration pulse test used to minimize self-heating effect. 7. clamping voltage value is ba sed on an 8x20s peak pulse current (i pp ) waveform.
dt1042-04so document number: ds36292 rev. 2 - 2 3 of 5 www.diodes.com september 2013 ? diodes incorporated dt1042-04so advance information 100 0 25 50 75 100 125 150 175 200 t , ambient temperature(c) a figure 1 pulse derating curve p eak p u sle de r a t i n g i n % o f peak power or current 75 25 0 50 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 -60 b r eak d o w n v o l t a g e, t r i g g e r v o l t a g e, holding voltage (v) -40 -20 0 20 40 60 80 100 120 140 160 t , ambient temperature(c) a figure 2 breakdown voltage, trigger voltage, holding voltage vs. ambient temperature bv vtrig vh 5.0 5.5 6.0 6.5 7.0 7.5 8.0 012345678910 , iec61000-4-5 (lighting) current from i/o to v (a) figure 3 clamping voltage characteristics ss current from v to v (a) cc ss v, c lam p in g v o l t a g e (v) c v to v cc ss i/o to v ss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345678910 v, f o wa r d v o l t a g e (v) f current from to (a) figure 4 forward voltage characteristics vi/o current from v to v (a) ss ss cc iec61000-4-5 (lighting) v to v ss cc v to i/o ss 0 1 2 3 4 5 6 7 8 9 10 time (s) figure 5 waveform of clamping voltage, current vs. time (8/20 s, i/o to v ) ss c la m p i n g v o l t a g e, c u r r e n t (v, a) -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 ampere voltage 0 1 2 3 4 5 6 7 8 9 10 -40-30-20-10 0 102030405060 time (s) figure 6 waveform of clamping voltage, current vs. time (8/20 s, to v ) ss v cc c lam p i n g v o l t a g e, c u r r e n t (v, a) ampere voltage
dt1042-04so document number: ds36292 rev. 2 - 2 4 of 5 www.diodes.com september 2013 ? diodes incorporated dt1042-04so advance information package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v (v) i/o input voltage figure 7 input capacitance vs. input voltage c (pf) i/o in p u t c a p a c i t an c e f=1mhz 0 2 4 6 8 10 12 14 16 18 20 024681012 voltage from v to v (v) voltage from i/o to v (v) cc ss ss figure 8. current vs. voltage c u r r e n t f r o m v t o v (a) cc ss ss current from i/o to v (a) v to v cc ss i/o to v ss sot26 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d ?? ?? 0.95 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 ?? 0 8 ?? all dimensions in mm dimensions value (in mm) z 3.20 g 1.60 x 0.55 y 0.80 c1 2.40 c2 0.95 a m j l d b c h k x z y c1 c2 c2 g
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